p-channel enhancement mode vertical dmos fet issue 2 ? september 94 features * 240 volt v ds *r ds(on) =9 w * low threshold applications * electronic hook switch refer to ZVP4424A for graphs absolute maximum ratings. parameter symbol value unit drain-source voltage v ds -240 v continuous drain current at t amb =25c i d -200 ma pulsed drain current i dm -1 a gate source voltage v gs 40 v power dissipation at t amb =25c p tot 750 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ max. unit conditions. drain-source breakdown voltage bv dss -240 v i d =-1ma, v gs =0v gate-source threshold voltage v gs(th) -0.7 -1.4 -2.0 v id=-1ma, v ds = v gs gate-body leakage i gss 100 na v gs = 40v, v ds =0v zero gate voltage drain current i dss -10 -100 m a m a v ds =-240 v, v gs =0 v ds =-190v, v gs =0v, t=125c on-state drain current i d(on) -0.75 -1.0 a v ds =-10 v, v gs =-10v static drain-source on-state resistance r ds(on) 7.1 8.8 9 11 w w v gs =-10v,i d =-200ma v gs =-3.5v,i d =-100ma forward transconductance (1) (2) g fs 125 ms v ds =-10v,i d =-0.2a input capacitance (2) c iss 100 200 pf v ds =-25v, v gs =0v, f=1mhz common source output capacitance (2) c oss 18 25 pf reverse transfer capacitance (2) c rss 515pf turn-on delay time (2)(3) t d(on) 815ns v dd ?- 50v, i d =-0.25a, v gen =-10v rise time (2)(3) t r 815ns turn-off delay time (2)(3) t d(off) 26 40 ns fall time (2)(3) t f 20 30 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator e-line to92 compatible 3-439 zvp4424c 3-436 g d s p-channel enhancement mode vertical dmos fet issue 2 ? september 94 features * 240 volt v ds *r ds(on) =9 w * low threshold applications * electronic hook switch absolute maximum ratings. parameter symbol value unit drain-source voltage v ds -240 v continuous drain current at t amb =25c i d -200 ma pulsed drain current i dm -1 a gate source voltage v gs 40 v power dissipation at t amb =25c p tot 750 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ max. unit conditions. drain-source breakdown voltage bv dss -240 v i d =-1ma, v gs =0v gate-source threshold voltage v gs(th) -0.7 -1.4 -2.0 v id=-1ma, v ds = v gs gate-body leakage i gss 100 na v gs = 40v, v ds =0v zero gate voltage drain current i dss -10 -100 m a m a v ds =-240 v, v gs =0 v ds =-190v, v gs =0v, t=125c on-state drain current i d(on) -0.75 -1.0 a v ds =-10 v, v gs =-10v static drain-source on-state resistance r ds(on) 7.1 8.8 9 11 w w v gs =-10v,i d =-200ma v gs =-3.5v,i d =-100ma forward transconductance (1) (2) g fs 125 ms v ds =-10v,i d =-0.2a input capacitance (2) c iss 100 200 pf v ds =-25v, v gs =0v, f=1mhz common source output capacitance (2) c oss 18 25 pf reverse transfer capacitance (2) c rss 515pf turn-on delay time (2)(3) t d(on) 815ns v dd ?- 50v, i d =-0.25a, v gen =-10v rise time (2)(3) t r 815ns turn-off delay time (2)(3) t d(off) 26 40 ns fall time (2)(3) t f 20 30 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator e-line to92 compatible ZVP4424A d g s
typical characteristics 0-2-4-6-8-10 -1.2 transfer characteristics v ds =-10v 300 m s pulsed test i d - drain cur r e nt ( am ps) v gs - gate source voltage (volts) -0.8 -0.6 -0.4 0 -0.2 -1.0 0 -2 -4 -6 -8 -10 -1.2 saturation characteristics i d - drain curre n t (amps) v ds - drain source voltage (volts) -0.8 -0.6 -0.4 0 -0.2 -1.0 300 m s pulsed test v gs =-10v -5v -4v -3v -2.5v -2v transconductance v drain current i d - drain current (amps ) g fs -transconductance (ms) 300 0 -0.2 -0.4 -0.6 -0.8 -1.0 400 transconductance v gate-source voltage v gs -gate source voltage (volts) g fs -transconductance (ms) 0-2 -4-6 300 m s pulsed test v ds =-10v 300 m s pulsed test v ds =-10v normalised r ds(on) and v gs(th) vs temperature junction temperature (c) normalis ed r d s(o n ) a nd v g s(th) -50 -25 0 25 50 75 125 100 150 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 drai n - s o u rce resi s ta n c e r ds( o n) g ate t h res h o l d vo l tag e v gs ( t h ) on-resistance vs drain current i d- drain current (amps) rds(on)-drain source on resistance ( w ) -2.5v -3v v gs= -10v i d= -1ma v gs= v ds -10v 10 1 100 -0.01 -0.1 -10 v gs =-2v 300 m s pulsed test -1 i d =0.2a 0.2 0.4 0.0 200 100 0 300 400 200 100 0 c rss c oss typical characteristics 01 45 -6 -8 -10 -14 -16 -12 -4 -2 0 q-gate charge (nc) 200 150 100 0 50 250 300 -0.01 -1 -10 -100 v ds -drain source voltage (volts) capacitance v drain-source voltage c-capac ita n ce ( p f ) note:v gs= 0v c iss v gs -gate source voltage (volts) gate charge v gate-source voltage v ds = -20v -50v -100v note:i d=- 0.25a 3 2 0.0001 50 150 100 maximum transient thermal impedance pulse width (seconds) thermal resistance (c/w) 10 100 1 0.1 0.01 d=1 (d.c.) d=0.5 d=0.2 d=0.1 single pulse 0.001 0 d=0.05 derating curve t amb - ambient temperature (c) p tot -power dissipation (mw) 0.8 150 0.6 0.4 0.2 0 100 50 0 3-438 ZVP4424A 3-437 ZVP4424A
typical characteristics 0-2-4-6-8-10 -1.2 transfer characteristics v ds =-10v 300 m s pulsed test i d - drain cur r e nt ( am ps) v gs - gate source voltage (volts) -0.8 -0.6 -0.4 0 -0.2 -1.0 0 -2 -4 -6 -8 -10 -1.2 saturation characteristics i d - drain curre n t (amps) v ds - drain source voltage (volts) -0.8 -0.6 -0.4 0 -0.2 -1.0 300 m s pulsed test v gs =-10v -5v -4v -3v -2.5v -2v transconductance v drain current i d - drain current (amps ) g fs -transconductance (ms) 300 0 -0.2 -0.4 -0.6 -0.8 -1.0 400 transconductance v gate-source voltage v gs -gate source voltage (volts) g fs -transconductance (ms) 0-2 -4-6 300 m s pulsed test v ds =-10v 300 m s pulsed test v ds =-10v normalised r ds(on) and v gs(th) vs temperature junction temperature (c) normalis ed r d s(o n ) a nd v g s(th) -50 -25 0 25 50 75 125 100 150 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 drai n - s o u rce resi s ta n c e r ds( o n) g ate t h res h o l d vo l tag e v gs ( t h ) on-resistance vs drain current i d- drain current (amps) rds(on)-drain source on resistance ( w ) -2.5v -3v v gs= -10v i d= -1ma v gs= v ds -10v 10 1 100 -0.01 -0.1 -10 v gs =-2v 300 m s pulsed test -1 i d =0.2a 0.2 0.4 0.0 200 100 0 300 400 200 100 0 c rss c oss typical characteristics 01 45 -6 -8 -10 -14 -16 -12 -4 -2 0 q-gate charge (nc) 200 150 100 0 50 250 300 -0.01 -1 -10 -100 v ds -drain source voltage (volts) capacitance v drain-source voltage c-capac ita n ce ( p f ) note:v gs= 0v c iss v gs -gate source voltage (volts) gate charge v gate-source voltage v ds = -20v -50v -100v note:i d=- 0.25a 3 2 0.0001 50 150 100 maximum transient thermal impedance pulse width (seconds) thermal resistance (c/w) 10 100 1 0.1 0.01 d=1 (d.c.) d=0.5 d=0.2 d=0.1 single pulse 0.001 0 d=0.05 derating curve t amb - ambient temperature (c) p tot -power dissipation (mw) 0.8 150 0.6 0.4 0.2 0 100 50 0 3-438 ZVP4424A 3-437 ZVP4424A
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